Course : EE
2601 Electronic Devices and
Circuits
Prerequisite
: BG 1213 Physics II
Pre/Corequisite : EE 2201
Electric Circuits
Instructor
:Dr.P.Seshanna
Office :
Room E52
1.
Know
the properties of semiconductors-Ge, Si and GaAs
2.
Explain
P and N type semiconductors and carriers therein
3.
Know
the working of p-n junction diode and its current equation
4.
Know
the V-I characteristics of Ge, Si and GaAs diodes.
5.
Know
the effect of temperature on the V-I characteristic of diode
6.
Draw
equivalent circuits of an ideal and practical diode
7.
Define
and determine different resistance levels of a diode
8.
Solve
circuits containing diodes-clipping ,clamping and single phase rectifier
circuits.
9.
Study
data sheet and understand various ratings of a diode
10. Know transition and
diffusion capacitance and reverse recovery time of diode under switching
conditions
11. Know the working
principles, V-I characteristics of Zener diode
12. Apply Zener Diode as a
voltage regulator/ clipper
13. Know the working
principles, V-I characteristics and applications of the following two terminal
devices: (a) Schottky diode(b) Varicap (Varactordiode) (c)Tunnel diode (d)
Photodiode (e)Photoconductive cell (LDR)(f)Solar cell(g) Light emitting
diode(LED) (h)Thermistor
14. Describe the structure
and operation of NPN/PNP BJTs
15. Draw the input / output
V-I characteristics of BJT in CE/CB mode
16. Analyze and design
biasing circuits and know the effect of temperature on the stability of
operating point.
17. Draw re models
of BJT in CE and CB mode
18. Do small signal analysis
of CE,CB,CC amplifiers and calculate
21. Describe the
constructional features, working and V-I characteristics of JFET, D-E MOSFET
22. Analyze the biasing circuits for JFET/MOSFET
amplifier
23. Know the small signal
equivalent circuits of JFET
24. Analyze CS/CD amplifiers
and calculate Av, ZI, Zo
25. Analyze and design
simple D.C. power supplies
Contd..2
Page 2…
Course Coverage (EE
2601)
Week 1/2/3/4 :
Chapters 1,2- semiconductor diodes and applications. Chapter 16- other two terminal devices-students
study and prepare notes and submit as assignment
Week 5/6/7 :
Chapters 3,4-BJTs: characteristics ,d.c biasing and re modeling.
Week 8/9 :
Chapters 5 –small signal BJT amplifier analysis
Week 10/11 :
Chapters 6,7- FETs construction,
characteristics and their biasing
Week
12/13 : Chapters
8-FET small signal amplifier analysis
Week 14/15 :
Chapter 15- simple d.c power supplies and voltage regulators
Text
Book : “Electronic Devices
and Circuit Theory “9th Edition by Robert Boylestad and Louis Nashelsky-Prentice Hall 2006
For
on line student study guide visit: www.prenhall.com/boylestad
E-Learning
material is available at http://content.eng.au.edu/lms
Note: 1. The depth of
coverage of the subject matter is limited to the chapters mentioned
2. Assignments will be given every week and to
be submitted in the following
week . Late submissions will not be accepted.
3. 80% attendance is required to take the final
examination.
4. Last day to withdraw with “W” is 5th February 2007
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EXAMINATION SCHEDULE:
Mid-term
Examination : 8-1-2007…15-17hrs
Final
Examination
:
5-3-2007….13-16hrs
Note: Students are not allowed into examination hall if they are late by more than 10 minutes.
MARK
ALLOCATION and GRADING:
Assignments : 10%
Midterm
Examination : 30%
Final
comprehensive Examination : 60%
Total : 100%
Grading: 51-60% =C, 61-65% = C+, 66-70% = B-, 71-75% = B, 76-80% = B+
81-90% = A-,
91-100% = A. (indicative only)
Dr.P.Seshanna
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